Job Description

Job Description

Within the BAE Systems MMIC and Foundry Capabilities group, based in Nashua, NH, we design and fabricate high performance GaN and GaAs microwave and millimeter-wave ICs for the Space and Defense markets. We are looking for a mid-level semiconductor device characterization engineer to contribute to the development of our GaN and GaAs fabrication processes and the modeling of transistors at the heart of our GaN and GaAs ICs. Job responsibilities will include the following:

• Set up wafer probers and test equipment to characterize transistors and related semiconductor devices for state-of-the-art GaN and GaAs process technologies
• Calibrate test systems and execute test plans for a wide range of high-frequency on-wafer measurements over temperature including static and pulsed current-voltage, CW and pulsed S-Parameter, load- and source-pull, noise parameter, and intermodulation/mixer measurements
• Provide validated test data files for device compact modeling activities and summaries of validated test data for process development activities
• Contribute to the development of test structures and test chips for device and technology characterization, modeling, and validation
• Work with our process development team to support the development and production release of next generation GaN and GaAs processes
• Work with our device modeling team to support development of predictive compact simulation models that accurately account for geometric, bias, temperature, and statistical variation from DC to W-band

Typical Education and Experience

Typically a Bachelor's Degree and 4 years work experience or equivalent experience

Required Skills and Education

You are best equipped for this job if you have:

• A University Degree (master or above) in Electrical Engineering, Semiconductor Physics, Microelectronics or comparable
• 5+ years of professional experience with on-wafer measurement of semiconductor devices and integrated circuits
• Knowledge of semiconductor process and device physics with special emphasis on compound semiconductors and Field-Effect Transistors (FETs)
• Proficiency with state-of-the-art high-frequency vector network analyzers (VNAs) including for high-power/nonlinear frequency and time-domain measurements under CW and pulsed conditions
• Experience with scripting languages like Python
• Understanding of calibration and measurement techniques for on-wafer measurements including static and pulsed I-V, CW and pulsed S-Parameters, gain, power, efficiency, linearity, intermodulation distortion, load-/source-pull, and noise parameters/noise figure
• Excellent verbal and written communication skills including strong presentation skills
• A continuous improvement mindset

About BAE Systems, Inc.

BAE Systems, Inc. is a defense, aerospace, and security company headquartered in Falls Church, Virginia, with more than 40,000 employees worldwide. We serve, supply, and protect those who protect us. As one of the most geographically diverse international defense companies, we deliver a full range of products and services spanning air, land, maritime, space, and cyber, including advanced electronics, intelligence solutions, and dedicated customer support.

Our culture is performance-driven and values-led, built on curiosity, creativity, and collaboration. Purpose isn't a tagline here. It's what drives us. We're developing breakthrough technologies that defend national security and make a lasting impact on our communities and our planet. When you join BAE Systems, you're not just building a career. You're contributing to a mission that truly matters.

This position will be posted for at least 5 calendar days. The posting will remain active until the position is filled, or a qualified pool of candidates is identified.